Romanian Journal for Information Science and Technology (ROMJIST)

An open – access publication

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ROMJIST is a publication of Romanian Academy,
Section for Information Science and Technology

Editor – in – Chief:
Academician Dan Dascalu

Secretariate (office):
Adriana Neagu
Adress for correspondence: romjist@romjist.ro

Editing of the printed version: Mihaela Marian (Publishing House of the Romanian Academy, Bucharest)

Sponsor: National Institute
for R & D in Microtechnology
(IMT Bucharest)

ROMJIST Volume 20, No. 4, 2017, pp. 385-399, Paper no. 573/2017
 

J. F. Mogniotte, M. Lazar, C. Raynaud, D. Planson, B. Allard
SiC integrated circuits for smart power converter

ABSTRACT: The limits of the current electronic solutions based in silicon, restrict the use in harsh environments especially in high temperature (>300 °C). SiC is a material, which allows exceeding these physical constraints. For this purpose SiC integrated circuits based on lateral MESFET have been developed. First steps of the development of smart integrated driver circuit dedicated to harsh environment are presented. Three functions: amplifier, ring oscillator and comparator have been designed, manufactured and characterized.

KEYWORDS: SiC, Integrated circuits, MESFET

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