Romanian Journal of Information Science and Technology (ROMJIST)

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ROMJIST is a publication of Romanian Academy,
Section for Information Science and Technology

Editor – in – Chief:
Academician Dan Dascalu

Secretariate (office):
Adriana Neagu
Adress for correspondence: romjist@romjist.ro

Editing of the printed version: Mihaela Marian (Publishing House of the Romanian Academy, Bucharest)

Sponsor: National Institute
for R & D in Microtechnology
(IMT Bucharest)

ROMJIST Volume 21, No. 1, 2018, pp. 34-48, Paper no. 579/2018
 

Anca Mihaela Dragan, Alina Negut, Andrei Enache, Vlad Anghel, Gheorghe Brezeanu
Charge retention of a Floating gate Transistor for a Reset Controller

ABSTRACT: An integrated reset controller (voltage supervisor) is designed and implemented. The system generates a reset signal, active while power supply brownout conditions are detected and for 250 ms after the supply voltage has increased to acceptable levels. The circuit is built in a Deep N–Well (DNW) 5V 0.35μm CMOS process, which provides good isolation between the on-chip devices and the substrate. The controller is based on a comparator, which uses a programmable voltage reference built with floating gate (FG) transistors. The voltage supervisor’s operation is demonstrated by simulations and measurements. The charge retention capability of the FG transistors is analyzed, using the Arrhenius model to estimate behavior under normal operating conditions, based on its behavior at high temperatures.

KEYWORDS: On-Chip Isolation, Deep N-Well, Reset Controller, Programmable Voltage Reference, Floating Gate Transistors, Charge Retention, Arrhenius Model

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