Romanian Journal of Information Science and Technology (ROMJIST)

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ROMJIST is a publication of Romanian Academy,
Section for Information Science and Technology

Editor – in – Chief:

Academician Dan Dascalu

Secretariate (office):
Adriana Apostol
Adress for correspondence: romjist@nano-link.net (after 1st of January, 2019)

Editing of the printed version: Mihaela Marian (Publishing House of the Romanian Academy, Bucharest)

Technical editor
of the on-line version:
Lucian Milea (University POLITEHNICA of Bucharest)

Sponsors:
• National Institute for R & D
in Microtechnologies
(IMT Bucharest), www.imt.ro
• Association for Generic
and Industrial Technologies (ASTEGI), www.astegi.ro

ROMJIST Volume 22, No. 1, 2019, pp. 14-29, Paper no. 615/2019
 

Viorel Banu, Josep Montserrat, Xavier Jordà, Philippe Godignon
Electro-Optical Method for Surface Recombination Evaluation in Silicon Carbide Bipolar Junction Transistors

ABSTRACT: This paper reports two original methods aimed for the surface recombination studies of bipolar junction transistors made on silicon carbide subject to a significant surface recombination around the emitter-base junction. The first novel method targets the measurement of very short minority carrier lifetime in semiconductor junctions by combining the current switch lifetime measurement approach with electro-optical excitation. The second method is elaborated to evaluate individually the surface recombination velocity for each transistor using the combined electro-optical measurement of very short lifetime in base-emitter junctions. Previous to its use for silicon carbide BJTs, the first presented method was tested and calibrated on silicon bipolar transistors using combined electro-optical measurements.

KEYWORDS: Minority carrier lifetime; surface recombination; bipolar junction transistor; silicon carbide; optical excitation

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