Romanian Journal of Information Science and Technology (ROMJIST)

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ROMJIST is a publication of Romanian Academy,
Section for Information Science and Technology

Editor – in – Chief:
Academician Dan Dascalu

Secretariate (office):
Adriana Neagu
Adress for correspondence: romjist@nano-link.net (after 1st of January, 2019)

Editing of the printed version: Mihaela Marian (Publishing House of the Romanian Academy, Bucharest)

Technical editor
of the on-line version:
Lucian Milea (University POLITEHNICA of Bucharest)

Sponsors:
• National Institute for R & D
in Microtechnologies
(IMT Bucharest), www.imt.ro
• Association for Generic
and Industrial Technologies (ASTEGI), www.astegi.ro

ROMJIST Volume 22, No. 2, 2019, pp. 103-110, Paper no. 621/2019
 

J.F. Mogniotte, C. Raynaud, M. Lazar and L. Michel
Analytical modelling of a lateral dual gate MESFET for integrated circuit in SiC

ABSTRACT: This paper presents a static analytical model derived from a lateral dual gate MESFET in SiC for which the gates have the particularity to be of different physical nature: the first gate is a Schottky barrier and the second gate is a bipolar junction. In order to build a design-kit dedicated to simulation, a spice model has been developed that includes an analytical model of the MESFET which takes into account especially the influence of the both gates on the channel conductivity. The model provides results with a good agreement with experimental measurements and continuous optimization processes allow having a better matching.

KEYWORDS: SiC, analytical model, MESFET

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