Romanian Journal of Information Science and Technology (ROMJIST)

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ROMJIST is a publication of Romanian Academy,
Section for Information Science and Technology

Editor – in – Chief:
Academician Dan Dascalu

Secretariate (office):
Adriana Neagu
Adress for correspondence: romjist@nano-link.net (after 1st of January, 2019)

Editing of the printed version: Mihaela Marian (Publishing House of the Romanian Academy, Bucharest)

Technical editor
of the on-line version:
Lucian Milea (University POLITEHNICA of Bucharest)

Sponsors:
• National Institute for R & D
in Microtechnologies
(IMT Bucharest), www.imt.ro
• Association for Generic
and Industrial Technologies (ASTEGI), www.astegi.ro

ROMJIST Volume 23, No. 2, 2020, pp. 176-187, Paper no. 646/2020
 

Stefan MARINCA, Mircea BODEA, Angelica STIGLET, Bogdan BARON
New Extraction Method of the Bipolar Transistor Model Parameters Used in Bandgap Voltage References

ABSTRACT: A new extraction method of the critical model parameters affecting temperature variation of the bandgap type voltage reference is presented. According to the new method, the two model parameters describing the linear and non-linear temperature dependence of the bandgap type voltage references are extracted from the raw data of the reference voltage vs. temperature and not from direct measurements of the bipolar transistor.

KEYWORDS: bipolar transistor; base-emitter voltage; model parameters; bandgap voltage reference; temperature variation; silicon based temperature sensor

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