ROMJIST Volume 24, No. 1, 2021, pp. 28-36
Cristian RAVARIU, Dan E. MIHAIESCU, Alina MOROSAN, Avireni SRINIVASULU Electrical characterization of a pseudo-mos transistor with organic thin film produced by nanotechnologies
ABSTRACT: Organic thin film transistors are alternative candidates to classical electronics, due to the success of organic semiconductors with a carriers mobility more than 0.1cm2/Vs. The purpose of this paper is to offer an electrical characterization of some organic thin film transistors, based on a classical characterization method. Silicon On Insulator (SOI) wafers are classically characterized by the pseudo-MOS transistors. Hence, this paper at the outset presents main technological steps for the fabrication of an organic Semiconductor On organic Insulator, which is still a SOI structure. The fabricated organic structure is aided by nanotechnologies and uses non-toxic precursors, opening new directions for green organic electronics. The experimental current-voltage static characteristics are measured. The measurements of the transfer characteristics indicate an increasing drain current with the gate voltage in modulus. So, the p-type organic layer is working in accumulation. By electrical characterization, some of the device parameters are extracted: doping concentration around 8x1013cm-3, holes mobility of 0.2cm2/Vs in the organic film and a global interface charge of 6x1010 e/cm2.KEYWORDS: Experiment, organic shell, green electronics, electrical characterization, thin film transistorRead full text (pdf)