Romanian Journal of Information Science and Technology (ROMJIST)

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ROMJIST is a publication of Romanian Academy,
Section for Information Science and Technology

Editor – in – Chief:

Academician Dan Dascalu

Secretariate (office):
Adriana Apostol
Adress for correspondence: romjist@nano-link.net (after 1st of January, 2019)

Editing of the printed version: Mihaela Marian (Publishing House of the Romanian Academy, Bucharest)

Technical editor
of the on-line version:
Lucian Milea (University POLITEHNICA of Bucharest)

Sponsors:
• National Institute for R & D
in Microtechnologies
(IMT Bucharest), www.imt.ro
• Association for Generic
and Industrial Technologies (ASTEGI), www.astegi.ro

ROMJIST Volume 24, No. 84, 2021, pp. 28-36, Paper no. 678/2021
 

Cristian RAVARIU, Dan E. MIHAIESCU, Alina MOROSAN, Avireni SRINIVASULU
Electrical characterization of a pseudo-mos transistor with organic thin film produced by nanotechnologies

ABSTRACT: Organic thin film transistors are alternative candidates to classical electronics, due to the success of organic semiconductors with a carriers mobility more than 0.1cm2/Vs. The purpose of this paper is to offer an electrical characterization of some organic thin film transistors, based on a classical characterization method. Silicon On Insulator (SOI) wafers are classically characterized by the pseudo-MOS transistors. Hence, this paper at the outset presents main technological steps for the fabrication of an organic Semiconductor On organic Insulator, which is still a SOI structure. The fabricated organic structure is aided by nanotechnologies and uses non-toxic precursors, opening new directions for green organic electronics. The experimental current-voltage static characteristics are measured. The measurements of the transfer characteristics indicate an increasing drain current with the gate voltage in modulus. So, the p-type organic layer is working in accumulation. By electrical characterization, some of the device parameters are extracted: doping concentration around 8x1013cm-3, holes mobility of 0.2cm2/Vs in the organic film and a global interface charge of 6x1010 e/cm2.

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