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O. TRIEBL,
T. GRASSER
Vector Discretization Schemes in Technology CAD Environments
Abstract.
In Technology CAD (TCAD) environments, a proper vector discretization in two
or three dimensions is of crucial importance because physical models used in
semiconductor device simulation tools depend on vector quantities. We discuss
two discretization methods for Delaunay meshes that are based on the
unstructured neighborhood information. In addition a comparison to an element
based method is given. Overall good convergence is achieved by applying these
methods in a TCAD environment for the calculation of the driving force, electric
field, and the current density vector. An example simulation of a diode in
breakdown and a bipolar structure in snap-back operation is presented.
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