S. EFTIMIE, ALEX. RUSU, A. RUSU
MOSFET Model with Simple Extraction Procedures, Suitable for Sensitive Analog Simulations

Abstract.
In MOS modeling, the region between subtreshold and strong inversion, called moderate inversion region, has received little attention. Conventional models like BSIM or EKV use mathematical smoothing functions to model the moderate inversion. As the supply voltages are scaled down, this region becomes an increasingly larger fraction in the overall operation bias of MOSFETs. Because of this, the smoothing functions for moderate inversion increased in complexity and in number of parameters. The surface potential based models solve this problem by increasing the physical content of the model, thus using a small number of parameters. This paper proposes to present one such
model and the extraction procedures for its parameters.

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