CIPRIAN ILIESCU, JIASHEN WEI, BANGTAO CHEN, POH LAM ONG
Silicon Nitride Membrane for Cell Culturing

Abstract. This paper presents a development in producing low residual stress PECVD SiNx layers at high deposition rates and their application in cell culturing. The key factor in the novel process is the employment of up to 600 W high powers in high frequency (13.56 MHz). In conjunction with the adjustment of the reactant gases composition, the residual stress can be tuned to 4 MPa and high deposition rate up to 320 nm/min can be achieved meanwhile. Moreover, by using this optimized process, an 11┬Ám thick low stress SiNx layer was produced, which will be used to fabricate large area windows for cell culture. Finally, a cell culture test by cultivating mouse stem cells onto porous membrane by the low stress PECVD SiNx layers also indicated that these layers are biocompatible and are suitable for cell culturing.

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