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Octavian PASTRAVANU, Mihaela Hanako
MATCOVSCHI, Mihail VOICU
Invariant-Set-Based Analysis and Design – A Survey of Some Noticeable
Contributions
pp. 425–439
Abstract. Invariant-set-based techniques represent a research direction in
systems engineering emerged during the last two decades. The authors of
the current paper have brought some noticeable contributions to the
development of this direction. The exposition of our results is connected
to the international evolution of the field. Our material offers an
overview structured at two levels:
1. Present framework – results available for invariant sets with general
shapes described by arbitrary HÄolder p-norms: (i) Types of dynamical
systems and invariant sets under consideration; (ii) Invariance and
stability; (iii) Invariance criteria for nonlinear systems; (iv)
Invariance criteria for linear systems (time-variant, time-invariant,
positive, with interval type uncertainties); (v) Linear synthesis based on
invariant sets; (vi) Comparison methods for invariant sets.
2. Researches prefiguring the present framework – results for invariant
sets with rectangular shapes (i) Linear time-invariant systems; (ii)
Linear systems with interval-type uncertainties; (iii) Linear synthesis;
(iv) Nonlinear systems.
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Petru CAŞCAVAL, Radu SILION, Doina
CAŞCAVAL
A BIST Logic Design for MarchS3C Memory Test BIST Implementation
pp. 440–454
Abstract. A logic design for a possible built-in self-testing
implementation of a march test able to detect all static simple three-cell
coupling faults in n × 1 random-access memories (RAMs) is presented.
Single-array single bit and multiple-array single bit test architectures
have been considered. The memory test (MarchS3C [1]) needs 66n operations
and is able to detect all realistic simple (i.e. not linked) static
three-cell coupling faults that have been shown to exist in real designs,
namely: state coupling faults, transition coupling faults, write disturb
coupling faults, read destructive coupling faults, deceptive read
destructive coupling faults, and incorrect read coupling faults. To reduce
the length of the test, only the coupling faults between physically
adjacent memory cells have been considered. The test assumes that the
storage cells are arranged
in a rectangular grid and that the mapping from logical addresses to
physical cell locations is known completely.
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Ioan TOMESCU, Ruxandra
MARINESCU-GHEMECI, Gabriela MIHAI
On Dense Graphs Having Minimum Randić Index
pp. 455–465
Abstract. In this paper all graphs G of order n and minimum degree δ(G) =
k having minimum Randić index R(G) are determined for k ≥ [n/2]. Each
extremal graph is the join between a regular graph of order n – s and a
complete graph of order s (where for n even and for n odd). This yields an
alternative proof in the case of dense graphs to that proposed by Li, Liu
and Liu [5] who very recently solved a long-standing conjecture on Randić
index. Also, the minimum value of this index in the class of graphs of
order n and δ(G) = k is determined for k ≥ (n–1)/2.
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Monica DASCĂLU, Gheorghe ŞTEFAN,
Adrian ZAFIU
Multi-level Simulator for Artificial Societies
pp. 466–484
Abstract. The simulator presented in this paper is used for human society
modelling in order to understand its specific phenomena and to predict the
future evolution of large human collectivities. The present paper presents
also some new and original artificial society experiments, highlighting
how the artificial societies model allows collective significant behaviors
to appear through simple individual rules. The artificial society concept
basically consists of a „cellular” landscape that contains different
resources and a population of agents grouped in social categories which
have economical and political activities. The experiments were related to
the real conditions of our country. This simulator create a proper
environment in order to identify the causes and mechanism which influence
the economical, social and political phenomena evolution from the human
society: production of goods, trade, diseases' spreading / the efficiency
of the immunizing methods, the impact of information in different welfare
and cultural conditions of population, voting mechanisms.
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Cristian ANDRIESEI, Liviu GORAS,
Farid TEMCAMANI, Bruno DELACRESSONIÈRE
Wide Tuning Range Active RF Bandpass Filter with MOS Varactors
pp. 485–495
Abstract. The paper presents an improved tuning method implemented for a
differential active inductor based RF bandpass filter. Derived from a
previous designed transistor-only second order filter topology,
independent frequency and quality factor tuning are demonstrated in 0.18
μm CMOS technology. The circuit has been basically designed for a maximum
frequency of 2.4 GHz, high enough to cover the main wireless standards,
has small power consumption and can exhibit very high Q values. A wide
frequency tuning range is obtained by using MOS varactors. The circuit
absorbs 1 mW from a 1.8 V supply at 2.4 GHz central frequency.
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Teodora IGNAT, Roberto MUNOZ, Irina
KLEPS, Mihaela MIU, Isabel OBIETA, Monica SIMION
SERS-Active Substrate Based on Macroporous Silicon
pp. 496–503
Abstract. Novel architectures with nanometric are very promising as
building blocks for future nanotechnological applications. Metallic
substrates with ordered morphology have been shown to be very effective
for surface-enhanced Raman scattering (SERS). The sensitivity of detection
is increased by several orders of magnitude by using this technique. In
this paper we investigate SERS on thermal evaporated gold layer / porous
silicon substrate comparatively to a PVD-gold layer/flat silicon
substrate.
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Cristian RAVARIU, Ala BONDARCIUC,
Florina RAVARIU, Elena MANEA, Cecilia PODARU
A first experimental model for a characterisation biodevice with
epinephrine solution
pp. 504–513
Abstract. The electrical properties of the chemical mediators at synapses
level could be investigated in vitro, with some test biodevices. One of
neurotransmitters, like epinephrine, placed on an insulator support and
contacted with metal electrodes, provides a Biomaterials On Insulators -
BOI-type, test architecture. The test device is inspired from the
pseudo-MOS technique, frequently used in the Silicon On Insulator
characterisation. The DC regime study allows some polarography
experiments. A behavior like a Field Effect Transistor was also
investigated in DC regime, biasing a third terminal – the gate and
monitoring the drain-source current. A dependence of the current – gate
voltage is expected. It is still linear, emphasizing none inversion layer
of the ionic charge. The AC regime measurements of the BOI device provided
some conductometry
results like resistivity. The current is a variable of time due to the
oxidation / reduction rate at the electrode surface. This parameter is
extracted from the switch regime of the biodevice.
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