F. BABARADA, M. D. PROFIRESCU, A. RUSU, C.
DUNĂRE
Distortion Analysis Including MOSFET Second Order Effects Modelling
Abstract.
The scaling-down evolution of semiconductor devices will ultimately attend
fundamental limits as transistor reach the nanoscale aria. In this context the
MOSFET models must give the process variations and the relevant characteristics
like current, conductance, transconductance, capacitances, flicker thermal or
high frequency noise and distortion. The new challenge of nanotechnology needs
very accurate models for active devices. The design of linear analog circuits
lacks models for state-of-the-art MOS transistors to accurately describe
distortion effects. This is mainly due to inaccurate modelling of the mobility
degradation effect i.e. the dependence of carrier mobility in the inversion
layer on the gate normal electric field. For short-channel devices the influence
of series resistance becomes important and depends on the gate voltage. The
drain current expression incorporating a new mobility relation obtained from
quantum mechanical transport analysis and the series resistance influence is in
good agreement with experiment. |