ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY
Volume 3, Number 1, 2000, 49 - 56

 

Electrical Study of Insulator Films
for Microwave Applications

Zsolt J. HORVATH, Maria ADAM, Vo Van TUYEN, Csaba DUCSO, Bela SZENTPALI
Hungarian Academy of Sciences,
Research Institute for Technical Physics and Materials Science,
Budapest, P.O.Box 49, H-1525, Hungary,
E-mail: horvzsj@mfa.kfki.hu

F. Giacomozzi
ITC-IRST, Via Sommarive 38050, Povo Trento, Italy,
E-mail: giaco@irst.itc.it

D. Pasquariello, K. Hjort
Uppsala Universitat, Dept. of Mat. Sci.
Microstructure Technology Group, P.O.B. 534,
Uppsala, Sweden, SE-751 21,
  E-mail: Klas.Hjort@angstrom.uu.se

P. Tutto
Semilab Rt., Budapest, Ăšjpest 3, P.O.Box 18, H-1347 Hungary,
E-mail: semilab@mail.matav.hu

Abstract.
Electrical behaviour of insulator films containing layers of SiOxNy with different composition and thickness are studied by d.c. current-voltage and a.c. capacitance-voltage and conductance-voltage measurements. The composition and preparation conditions have remarkable effect on the electrical behaviour of the deposited layers. The obtained results are compared and analysed.