ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY
Volume 3, Number 2, 2000, 143 - 156

The Inversion Onset at the MOS/SOI Capacitor
with Uniform and Non-uniform Impurities
Distributions in the Film

C. Ravariu, A. Rusu
"POLITEHNICA" University of Bucharest
Faculty of Electronics and Telecommunications,
313, Splaiul Independentei, 77206, Bucharest, Romania
E-mail: cristir@mcma.pub.ro

Abstract.
The analytical models of the electric field and potential distributions are useful for a lot of SOI devices, like SOI-MOSFET, SOI-BJT, pseudo-MOS transistors, SOI sensors and the others. One of the main interest is to establish the inversion or accumulation conditions at front or back interfaces.
The paper refers to a one-dimensional analysis, both for partially and fully depleted devices. The goal of this paper is to obtain the inversion conditions at the front interfaces in MOS/SOI capacitors with uniform and gaussian profile of the impurities in the silicon film. The study of the inversion onset at the interface Buried-Oxide/Substrate is investigated too.
The results are useful because they give an efficient method for threshold voltage deducing in many situations. They also represent a reference point in developing news models for SOI-devices manufactured on the films uniform or non-uniform doping. The results were compared with PISCES numerical simulations and were in a good agreement.