ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY
Volume 2, Number 1-2, 1999, 93 - 106

 

Long-Term Base Current Instability: A Major Concern
for AlGaAs/GaAs HBT Reliability

Juin J. LIOU
University of Central Florida, Orlando, Florida, USA
E-mail: jli@ece.engr.ucf.edu

 

Abstract.
This paper provides an overview of the long-term base current instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT), which is a main mechanism governing the HBT long-term current gain drift and thus a major concern for the HBT reliability. Topics covered include: 1) types of base current instability and their underlying physical mechanisms; 2) leakage currents in the HBT and their relevance to the reliability; 3) electro-thermal interaction and their impact on the HBT reliability; and 4) analytic model for predicting the HBT mean time to failure (MTTF). Measurements and device simulation results are also included in support of the modeling and analysis.