ROMANIAN JOURNAL OF INFORMATION SCIENCE AND
Volume 3, Number 1, 2000, 75 - 88
The Application of Makyoh
Topographyfor the Study of Deformations
in Dielectric Membrane Structures
Ferenc Riesz, Cs. Dücső, I.
Eördögh, B. Szentpáli
Hungarian Academy of Sciences,
Research Institute for Technical Physics and Materials Science (MFA),
P. O. Box 49, H–1525 Budapest, Hungary
R. Konakova, A. E. Belyaev, E.
A. Soloviev, N. S. Boltovets
Institute of Semiconductor Physics (ISP),
National Academy of Science of Ukraine,
Prospect Nauki 45, 252650 Kiev?28, Ukraine
National Institute for R & D in Microtechnologies (IMT),
P. O. Box 38–160, 72225 Bucharest, Romania
ITC–IRST, Via Sommarive 38050, Povo Trento, Italy
Makyoh-topography studies of the deformations in dielectric membrane structures are
reported. First, a geometrical optical model of the Makyoh image formation mechanism is
presented, and the fundamental properties of imaging are established. Methods for the
measurement of overall curvature and the reconstruction of the surface profile from the
observed images are described. The construction of a Makyoh-topography set-up is detailed.
Then, the study of the deformations of dielectric membranes and structures is reported. It
is shown that Makyoh is suitable to detect and quantify the deformations of the whole
wafer, the individual membranes as well as the substrate areas adjacent to the membranes.
For small membranes and strongly patterned structures, the imaging is limited by
diffraction effects; however, qualitative study is still possible. Examples of process
monitoring during membrane fabrication are presented as well.