F. LE NORMAND, C. S. COJOCARU, B. VIGOLO,
E. MINOUX, P. LEGAGNEUX, I. KLEPS, F. CRĂCIUNOIU, A. ANGELESCU, M. MIU, M.
Selective Growth of Carbon Nanotubes Vertically Aligned on Array of Processed
The development of field-effect devices induced a demand for very fine,
high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and
field-effect emitter arrays. Silicon pyramidal structures field emitter array
(Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for silicon
selective etch. Based on a new technology of carbon nanotubes selective growth
vertically aligned on the tip of silicon pyramidal structures the emission
efficiency of the processed silicon tips could be increased. The paper present
first results of this technology.