ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY
Volume 3, Number 1, 2000, 5 - 16

Development and Investigation of Oscillator Diodes
for the Millimeter Wavelength Range

A.E. Belyaev, R.V. Konakova, V.V. Milenin, E.A. Soloviev, D.I. Voitsikhovskyi
Institute of Semiconductor Physics,
National Academy of Sciences of Ukraine, Kiev, Ukraine
E-mail: konakova@eee.semicond.kiev.ua

N.S. Boltovets, V.V. Basanets, V.A. Krivutsa
State Scientific & Research Institute "Orion", Kiev, Ukraine
E-mail: bms@mvsemicond.kiev.ua

V.F. Mitin
Microsensor Ltd., Kiev, Ukraine
P.O. Box 95, 252108 Kiev-108, Ukraine
E-mail: mitin@msens.kiev.ua

Abstract.
We present the results of development of microwave oscillating diodes for 36 to 40 and 58 to 62 GHz frequency ranges. It was performed using the membrane technology on silicon. The degradation processes occurring at such diodes interfaces during accelerated tests were studied. A model for catastrophic failure due to a thermal pinch formation in the active area is proposed.