A. PEREZ-TOMAS, P. GODIGNON, N. MESTRES, J. MONTSERRAT, J. MILLAN
Thermal Oxidized
TaSi2 and Ta2Si Silicides to Form Dielectric Layers for MIS Structures on 4H-SiC
 

Abstract.
Some physical and electrical characteristics of the insulator layers produced by the deposition of the Ta2Si and TaSi2 Tantalum silicides on 4H-SiC substrates and subsequent oxidation are compared in this paper. The thermal oxidation of both silicides on Silicon carbide substrates, produces insulator layers with relatively good interfacial properties. The lower interface traps density and oxide charge and especially, the higher dielectric constant, make the product of the Ta2Si oxidation more suitable than the one from TaSi2 for gate applications. However, the oxidized TaSi2 layers present improved dielectric strength with reduced leakage current.

Keywords:
Silicon carbide, MOS, Tantalum silicide oxidation, Ta2Si, TaSi2, high-k.