M. PLACIDI, P. GODIGNON, N. MESTRES, J.
ESTEVE, G. FERRO, A. LEYCURAS, T. CHASSAGNE
Monocrystalline 3C-SiC for the Integration
of Electrostatic MEMS
This papers presents a new front-side micromachining process technology for
the fabrication of monocrystalline 3C-SiC layers on Si resonators. Due to
its outstanding electrical, mechanical, and chemical properties, SiC is
nowadays receiving attention as an alternative to Si, too limited for micro-
and nano-electromechanical systems (MEMS and NEMS) working in harsh
environment. Studies of the mechanical properties of 3C-SiC films on Si have
been carried out on fabricated test structures with different beam lengths
and widths. Devices utilizing beam thicknesses up to 1 mm have been
Keywords: Cubic Silicon carbide (3C-SiC), resonators, surface microma-chining, resonators, MEMS.