M. PLACIDI, P. GODIGNON, N. MESTRES, J. ESTEVE, G. FERRO, A. LEYCURAS, T. CHASSAGNE
Monocrystalline 3C-SiC for the Integration of Electrostatic MEMS

Abstract.
This papers presents a new front-side micromachining process technology for the fabrication of monocrystalline 3C-SiC layers on Si resonators. Due to its outstanding electrical, mechanical, and chemical properties, SiC is nowadays receiving attention as an alternative to Si, too limited for micro- and nano-electromechanical systems (MEMS and NEMS) working in harsh environment. Studies of the mechanical properties of 3C-SiC films on Si have been carried out on fabricated test structures with different beam lengths and widths. Devices utilizing beam thicknesses up to 1 mm have been successfully fabricated.

Keywords: Cubic Silicon carbide (3C-SiC), resonators, surface microma-chining, resonators, MEMS.