ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY
Volume 3, Number 2, 2000, 129 - 142

Technologies for Emitters
and Devices Based on Field Emission

Dan Nicolaescu
Electrotechnical Laboratory,
1-1-4 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
E-mail: ndan@etl.go.jp

Abstract.
The article reviews several basic technologies used to develop emitters and devices based on field emission. These microelectronic structures have as key element the "emitter", a sharp protrusion with curvature radius in the nanometer range. Vertical emitters are obtained either using vacuum deposition through a narrow hole or etching special structures defined in the silicon substrate. Lateral emitters use patterned sandwiches of thin films.