ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY
Volume 3, Number 1, 2000, 17 - 28

 

The Electric Properties of 
Wafer Bonded Si p-n Junction

Laszlo DOZSA, Zsolt J. HORVATH, Vo Van TUYEN, Bela SZENTPALI
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science,
Budapest, P.O.Box 49, H-1525 Hungary,

E-mail: dozsa@mfa.kfki.hu

D. Pasquariello, K. Hjort
Uppsala Universitet, Department of Materials Science
Microstructure Technology Group
P.O.B. 534 Uppsala, Sweden, SE-751 21

Abstract.
Wafer bonding is in many known applications a successful tool to integrate devices prepared on different semiconductor materials and structures, especially in optoelectronic and sensor applications. Unfortunately, wafer bonding is a technology not well characterised and understood, only few reports are found on the limitations of wafer bonding and its applications. The investigations are mostly limited to n-n or p-p homojunctions.
The aim of this work is to investigate the effect of the bonding on the electrical properties and to investigate the defects created by wafer bonding, hence we study wafer bonded slightly doped silicon p - silicon n junctions. For investigations XPS, ellipsometry, current - voltage, capacitance -voltage characterisation, and deep level transient spectroscopy were applied.