Y. SHADROKH, K. FOBELETS, J. E. VELÁZQUEZ-PÉREZ
Two Device Screen Grid Field Effect Transistor Logic

Abstract. The Screen-Grid Field Effect Transistor (SGrFET) is an oxide-gated FET with a novel 3D gating configuration made of cylinders perpendicular to the current flow in the channel resulting in a radially extending electric field. The multiple gate finger design of the SGrFET not only lends itself to excellent control of short channel effects but can also be exploited in compact logic applications with a reduced number of devices per gate. In this report TCAD results of both the DC and transient performance of double-gate row SGrFET logic are presented. The SGrFET inverter logic gives ps rise times and large noise margins of up to 400 mV for 1 V supply. NAND, NOR and XOR logic can be obtained using only two n-type SGrFETs.

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