Y.
SHADROKH, K. FOBELETS, J. E. VELÁZQUEZ-PÉREZ
Two Device Screen Grid Field Effect Transistor Logic
Abstract. The Screen-Grid Field Effect Transistor (SGrFET) is an
oxide-gated FET with a novel 3D gating configuration made of cylinders
perpendicular to the current flow in the channel resulting in a radially
extending electric field. The multiple gate finger design of the SGrFET not only
lends itself to excellent control of short channel effects but can also be
exploited in compact logic applications with a reduced number of devices per
gate. In this report TCAD results of both the DC and transient performance of
double-gate row SGrFET logic are presented. The SGrFET inverter logic gives ps
rise times and large noise margins of up to 400 mV for 1 V supply. NAND, NOR and
XOR logic can be obtained using only two n-type SGrFETs.
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