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A. IOACHIM,
M. I. TOACSĂN, L. NEDELCU, M. G. BANCIU, C. A. DUŢU, E. ANDRONESCU, S. JINGA Abstract. Ba(Zn1/3Ta2/3)O3 dielectric materials were prepared by solid
state reaction. The samples were sintered at temperatures in the range
1400±1600°C for 4 h. Morphostructural characterization was performed by using
SEM and XRD. The dielectric properties were measured in the microwave range (6
±7 GHz). An additional annealing at 1400°C for 10 hours was performed in order
to improve the dielectric parameters. The best parameters were achieved for the
samples sintered at 1600°C with additional thermal treatment. |