ROMJIST Volume 22, Number 1, 2019
CONTENTS:
Titus Sandu, Catalin Tibeica, Oana T. Nedelcu, Mihai Gologanu
Modal Approach to the Theory of Energy Transfer Mediated by a Metallic Nanosphere
pp. 3–13
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Viorel Banu, Josep Montserrat, Xavier Jordà, Philippe Godignon
Electro-Optical Method for Surface Recombination Evaluation in Silicon Carbide Bipolar Junction Transistors
pp. 14–29
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Florin Comanescu, Anca Istrate, Munizer Purica
Assessing by Raman spectroscopy the quality of CVD graphene transferred on oxidized silicon and quartz substrates
pp. 30–40
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Cornel Cobianu, Florin Nastase, Niculae Dumbravescu, Octavian Buiu,
Bogdan Serban, Mihai Danila, Raluca Gavrila, Octavian Ionescu, Cosmin Romanitan
Effect of Silicon Surface Cleaning on Electrical Properties of As-Deposited Atomically Layer-Deposited (ALD) HfO2 Films Obtained From Tetrakis(dimethylamino)Hafnium (TDMAH) and Water
pp. 41–56
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Cristian Ravariu, Elena Manea, Catalin Parvulescu, Florin Babarada, Alina Popescu, Dan E. Mihaiescu, Daniela Istrati
Technological aspects and simulation results for the Nothing On Insulator device developed into a planar technology
pp. 57–68
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Ines Hurez, Ted Chen, Florin Vlădoianu, Vlad Anghel, Gheorghe Brezeanu
Galvanically Isolated IGBT Gate Driver with Advanced Protections and A Fault Detection and Reporting Method
pp. 69–84
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Camil Băncioiu, Maria Vințan, Lucian Vințan
Efficiency Optimizations for Koller and Sahami's Feature Selection Algorithm
pp. 85–99
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