J.-P. COLINGE
The New Generation of SOI MOSFETs
pp. 3–15

S. CRISTOLOVEANU
How Many Gates Do We Need in A Transistor: One, Two, Three or Four?
pp. 17–28

D. DRAGOMAN, M. DRAGOMAN, A. A. MÜLLER
Graphene – A One-Atom-Thick Material for Microwave Devices
pp. 29–35

Y. SHADROKH, K. FOBELETS, J. E. VELÁZQUEZ-PÉREZ
Two Device Screen Grid Field Effect Transistor Logic
pp. 37–48

F. MARTORELL, S. D. COŢOFANĂ, A. RUBIO
Implementation Limitations of Reliable Nanogates
pp. 49–57

M. BÖYÜKATA, C. ÖZDOĞAN, Z. B. GÜVENÇ
Hydrogen hosting of nano scale boron clusters
pp. 59–70

R. DIVAN, Q. MA, D. C. MANCINI, D. T. KEANE
Controlled X-Ray Induced Gold Nanoparticles Deposition
pp. 71–84

A. TOMESCU, C.E. SIMION, R. ALEXANDRESCU, I. MORJAN, M. SCĂRIŞOREANU
Sensitivity to Reducing Gases of Polymer-Iron Nanocomposite Materials
pp. 85–95